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Open nowPosted 43 days ago

Staff Engineer GaN Technology Development (f/m/div)

EURES job mobility portal196,869 open roles

Where
Klagenfurt-Villach, Austria
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Your applicationOpen nowStaff Engineer GaN Technology Development (f/m/div)EURES job mobility portal · Klagenfurt-Villach, Austria

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This job: posted 43 days ago

The posting

Part of your life. Part of tomorrow.

We make life easier, safer and greener, with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future. Efficient use of energy, environmentally-friendly mobility and security in a connected world we solve some of the most critical challenges that our society faces while taking a conscientious approach to the use of natural resources. 1 Staff Engineer GaN Technology Development (f/m/div) ob IdHRC1744962JobfamilieResearch & DevelopmentVertragsdauerUnbefristetEinsteigen alsBerufserfahrene*r

#WeAreIn for jobs that impact everyone's life.

Join the thinkers, builders, and problem-solvers behind tomorrow's technology. As Staff Engineer for GaN Technology Development, you'll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life.

Are you in?

Your role

Key responsibilities in your new role

In this role, you will join a world-class GaN technology development team with a global footprint-shaping next-generation GaN power platforms that make power conversion more efficient, smaller, and more sustainable, and turning leading-edge innovation into real products that reduce energy loss across applications.

* Advance today's GaN technology nodes and develop next-generation GaN power platforms

* Own key process blocks end-to-end - drive proof of concept, initial setup, optimization, stability, and measurable performance gains

* Define, establish, and maintain the Process of Record (POR) to ensure robust, scalable manufacturing

* Plan and run experiments using DOE methodologies, then execute, analyze and document the results

* Perform statistical analysis and derive actionable conclusions

* Support root-cause investigations for stability and reliability issues

Your profile

Qualifications and skills to help you succeed

* Technical university degree (master or PhD) in Electrical Engineering, Microelectronics, Physics, Materials Science or similar

* 3+ years of relevant industry experience, ideally in technology development, process integration, power semiconductors or wide-bandgap technologies

* Solid understanding of semiconductor device physics (experience with GaN and HEMT structures is a strong plus)

* Experience in DOE and statistical analysis

* A structured, analytical problem-solving approach and ownership mindset

* Fluent English; German (or motivation to learn) is an advantage

We offer competitive salaries and additional benefits based on your performance, experience and qualification. The employment is in accordance with the collective salary and wage agreement for employees of the electrical and electronics industry, employment group G (https://www.feei.at/aktuelles/mindestloehne-und-gehaelter-eei/). The monthly salary is paid 14 times p.a. We offer a higher compensation depending on your expertise and skills.

Apply to this position online by following the URL and entering the Job ID in our job search.

https://www.infineon.com/jobs Das Mindestentgelt für die Stelle als Staff Engineer GaN Technology Development (f/m/div) beträgt 4.472,11 EUR brutto pro Monat auf Basis Vollzeitbeschäftigung. Bereitschaft zur Überzahlung.

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